Display apparatus and method of manufacturing the same

ABSTRACT

A display apparatus and a method of manufacturing a display apparatus, the apparatus including a substrate; a display on the substrate; and an encapsulation layer that seals the display, wherein the encapsulation layer includes a matrix including an organic material, and an inorganic material bonded to the organic material through functional groups of the organic material of the matrix, wherein the matrix includes an internal space adjacent to the organic material, the inorganic material being positioned in the internal space.

CROSS-REFERENCE TO RELATED APPLICATION

Korean Patent Application No. 10-2016-0088051, filed on Jul. 12, 2016,in the Korean Intellectual Property Office, and entitled: “DisplayApparatus and Method of Manufacturing the Same,” is incorporated byreference herein in its entirety.

BACKGROUND 1. Field

Embodiments relate to a display apparatus and a method of manufacturingthe same.

2. Description of the Related Art

Display technologies that involve the visual expression of various typesof electric signal information are developing rapidly. Thus, variousflat panel display apparatuses with excellent characteristics are beingintroduced, such as those with a slim profile, lightweight design, andlow power consumption, and further, research and development are beingconducted for flexible display apparatuses.

SUMMARY

Embodiments are directed to a display apparatus and a method ofmanufacturing the same.

The embodiments may be realized by providing a display apparatusincluding a substrate; a display on the substrate; and an encapsulationlayer that seals the display, wherein the encapsulation layer includes amatrix including an organic material, and an inorganic material bondedto the organic material through functional groups of the organicmaterial of the matrix, wherein the matrix includes an internal spaceadjacent to the organic material, the inorganic material beingpositioned in the internal space.

An amount of the inorganic material in the internal space may be greaterthan an amount of the inorganic material on a surface of the matrix.

The functional groups present on a surface of the matrix may be inactivewith respect to the inorganic material.

The functional groups may not be present on the surface of the matrix.

The matrix may further include a third material that does not react withthe inorganic material, and the functional groups present on the surfaceof the matrix may be combined with the third material.

The display apparatus may further include an inorganic layer that coversthe display, the inorganic layer being between the display and theencapsulation layer.

The embodiments may be realized by providing a method of manufacturing adisplay apparatus, the method including forming a display on asubstrate; and forming an encapsulation layer sealing the display,wherein forming the encapsulation layer includes forming a matrix thatcovers the display such that the matrix includes an internal spacetherein; infiltrating a first raw gas into the internal space of thematrix; and infiltrating a second raw gas into the internal space of thematrix to form an inorganic material in the internal space by reactingof the second raw gas with the first raw gas, wherein the matrixincludes an organic material having functional groups, and wherein thefirst raw gas combines with the functional groups.

The method may further include inactivating the functional groups thatare on a surface of the matrix prior to the infiltrating of the firstraw gas.

Inactivating the functional groups that are on the surface of the matrixmay include removing the functional groups from the surface of thematrix by performing a surface treatment prior to infiltrating the firstraw gas.

The surface treatment may include a plasma treatment.

Inactivating the functional groups that are on the surface of the matrixmay include reacting the functional groups on the surface of the matrixwith a third material that does not react with the first raw gas priorto infiltrating the first raw gas.

An amount of the inorganic material in the internal space may be greaterthan an amount of the inorganic material on a surface of the matrix.

The first raw gas and the functional group may be chemically combinedwith each other.

The method may further include forming an inorganic layer that coversthe display such that the inorganic layer is between the display and theencapsulation layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of ordinary skill in the art bydescribing in detail exemplary embodiments with reference to theattached drawings in which:

FIG. 1 illustrates a schematic cross-sectional view of a displayapparatus according to an embodiment;

FIG. 2 illustrates a schematic, enlarged cross-sectional view of part Aof FIG. 1;

FIG. 3 illustrates a schematic plan view of a matrix of an encapsulationlayer of FIG. 1;

FIG. 4 illustrates a schematic cross-sectional view of an inorganiclayer deposited on the matrix of FIG. 3;

FIG. 5 illustrates a schematic cross-sectional view of an example of amethod of manufacturing the encapsulation layer of FIG. 3;

FIG. 6 illustrates a schematic cross-sectional view of another exampleof a method of manufacturing the encapsulation layer of FIG. 3; and

FIG. 7 illustrates a schematic cross-sectional view of a modifiedexample of the display apparatus of FIG. 1.

DETAILED DESCRIPTION

Example embodiments will now be described more fully hereinafter withreference to the accompanying drawings; however, they may be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey exemplary implementations to those skilled in the art.

In the drawing figures, the dimensions of layers and regions may beexaggerated for clarity of illustration. Like reference numerals referto like elements throughout.

While such terms as “first”, “second”, etc., may be used to describevarious components, such components must not be limited to the aboveterms. The above terms are used only to distinguish one component fromanother.

An expression used in the singular encompasses the expression in theplural, unless it has a clearly different meaning in the context.

It will be understood that when a layer, region, or component isreferred to as being formed “on” or “under” another layer, region, orcomponent, it can be directly or indirectly formed on or under the otherlayer, region, or component. For example, intervening layers, regions,or components can be present. The positions “on” and “under” aredetermined on the basis of the drawings.

As used herein, the terms “or” and “and/or” includes any and allcombinations of one or more of the associated listed items. Expressionssuch as “at least one of,” when preceding a list of elements, modify theentire list of elements and do not modify the individual elements of thelist.

FIG. 1 illustrates a schematic cross-sectional view of a displayapparatus 10 according to an embodiment. FIG. 2 illustrates a schematic,enlarged cross-sectional view of part A of FIG. 1.

Referring to FIGS. 1 and 2, the display apparatus 10 according to anembodiment may include a substrate 100, a display 200 on the substrate100, and an encapsulation layer 300 sealing the display 200.

The substrate 100 may include various materials. For example, thesubstrate 100 may include a glass material having SiO₂ as a maincomponent. In an implementation, the substrate 100 may include a plasticmaterial. The plastic material may include polyethersulfone (PES),polyacrylate, polyetherimide (PEI), polyethylene naphthalate (PEN),polyethylene terephthalate (PET), polyphenylene sulfide (PPS),polyarylate (PAR), polyimide (PI), polycarbonate (PC), cellulosetriacetate (TAC), cellulose acetate propionate (CAP), cyclic olefinpolymer, cyclic olefin copolymer, etc.

The display 200 may be on the substrate 100 and displays an image. Forexample, the display 200 may include a thin film transistor TFT and adisplay device. For example, the display device may be an organiclight-emitting device 230. In an implementation, the display 200 mayinclude various types of display devices.

A buffer layer 202 may be on the substrate 100. For example, the bufferlayer 202 may include an inorganic material such as silicon oxide,silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride,titanium oxide, or titanium nitride, or an organic material such aspolyimide, polyester, or acryl, or a plurality of stacks including thesematerials.

The thin film transistor TFT may include an active layer 203, a gateelectrode 205, a source electrode 207, and a drain electrode 208. A casewill now be described where the thin film transistor TFT is of a topgate type in which the active layer 203, the gate electrode 205, thesource electrode 207, and the drain electrode 208 are formed in thestated order. In an implementation, various types of thin filmtransistors TFTs, such as a bottom gate-type thin film transistor TFT,may be employed.

The active layer 203 may include a semiconductor material, e.g.,amorphous silicon or polycrystalline silicon. In an implementation, theactive layer 203 may include various materials. In an implementation,the active layer 203 may include an organic semiconductor material, etc.In an implementation, the active layer 203 may include an oxidesemiconductor material. For example, the active layer 203 may include anoxide of a material selected from Group 12, 13, and 14 metal elementssuch as zinc (Zn), indium (In), gallium (Ga), tin (Sn), cadmium (Cd),and germanium (Ge), and a combination thereof.

A gate insulation layer 204 may be on the active layer 203. The gateinsulation layer 204 may have a multilayer structure or a single layerstructure including a layer including an inorganic material such assilicon oxide and/or silicon nitride, etc. The gate insulation layer 204may insulate the active layer 203 from the gate electrode 205.

The gate electrode 205 is on the gate insulation layer 204. The gateelectrode 205 may be connected to a gate line that applies an ON/OFFsignal to the thin film transistor TFT. The gate electrode 205 mayinclude a low resistance metal material. The gate electrode 205 mayinclude one or more materials of, e.g., aluminum (Al), platinum (Pt),palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni),neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca),molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu) in asingle layer structure or a multilayer structure.

An interlayer insulation layer 206 may be on the gate electrode 205. Theinterlayer insulation layer 206 may insulate the gate electrode 205 fromthe source electrode 207 and the drain electrode 208. The interlayerinsulation layer 206 may have a multilayer structure or a single layerstructure including a layer including an inorganic material. Forexample, the inorganic material may be metal oxide or metal nitride. Inan implementation, the inorganic material may include silicon oxide(SiO₂), silicon nitride (SiNx), silicon oxynitride (SiON), aluminumoxide (Al₂O₃), titanium oxide (TiO₂), tantalum oxide (Ta₂O₅), hafniumoxide (HfO₂), zinc oxide (ZnO₂), or the like.

The source electrode 207 and the drain electrode 208 may be on theinterlayer insulation layer 206. The source electrode 207 and the drainelectrode 208 may contact areas of the active layer 203. Each of thesource electrode 207 and the drain electrode 208 may include one or morematerials of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag),magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir),chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium(Ti), tungsten (W), and copper (Cu) in a single layer structure or amultilayer structure. For example, the source electrode 207 and thedrain electrode 208 may each have a three-layer stack structure oftitanium (Ti), aluminum (Al), and titanium (Ti).

A passivation layer 209 may cover the thin film transistor TFT. Thepassivation layer 209 may reduce steps caused by the thin filmtransistor TFT and have a planarized upper surface, thereby preventingthe occurrence of a defect in the organic light-emitting device 230 dueto unevenness of its lower portion.

The passivation layer 209 may have a single layer structure or amultilayer structure including a layer including an organic material.The organic material may include a general-purpose polymer such aspoly(methyl methacrylate) (PMMA) or polystyrene (PS), a polymerderivative having a phenol-based group, an acryl-based polymer, animide-based polymer, an aryl ether-based polymer, an amide-basedpolymer, a fluorine-based polymer, a p-xylene-based polymer, a vinylalcohol-based polymer, a blend thereof, etc. The passivation layer 209may include a composite stack including an inorganic insulating layerand an organic insulating layer.

The organic light-emitting device 230 may be on the passivation layer209. The organic light-emitting device 230 may include a first electrode231, a second electrode 232 facing the first electrode 231, and anintermediate layer 233 between the first electrode 231 and the secondelectrode 232.

The first electrode 231 may be electrically connected to the sourceelectrode 207 or the drain electrode 208. The first electrode 231 mayhave various shapes. For example, the first electrode 231 may bepatterned to have an island shape.

The first electrode 231 may be on the passivation layer 209 and may beelectrically connected to the thin film transistor TFT via a contacthole formed in the passivation layer 209. The first electrode 231 maybe, e.g., a reflective electrode. For example, the first electrode 231may include a reflective layer including silver (Ag), magnesium (Mg),aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni),neodymium (Nd), iridium (Ir), chromium (Cr), a compound thereof, etc.,and a transparent electrode layer formed over the reflective layer. Thetransparent electrode layer may include at least one of indium tin oxide(ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In₂O₃),indium gallium oxide (IGO), and aluminum zinc oxide (AZO).

The second electrode 232 facing the first electrode 231 may have variousshapes. For example, the second electrode 232 may be patterned to havean island shape. The second electrode 232 may be a transparentelectrode. The second electrode 232 may include a metal thin film havinga small work function, including Li, Ca, LiF/Ca, LiF/Al, Al, Ag, Mg, anda compound thereof. In an implementation, an auxiliary electrode layeror a bus electrode including a material such as ITO, IZO, ZnO, or In₂O₃may be further formed over the metal thin film. Accordingly, the secondelectrode 232 may transmit light emitted from an organic emission layerincluded in the intermediate layer 233. For example, the light emittedfrom the organic emission layer may be reflected directly or reflectedby the first electrode 231 formed as the reflective electrode and thusmay be emitted toward the second electrode 232.

In an implementation, the display 200 may be a bottom-emission type inwhich the light emitted from the organic emission layer is emittedtoward the substrate 100. In this case, the first electrode 231 may be atransparent electrode, and the second electrode 232 may be a reflectiveelectrode. In an implementation, the display 200 in the presentembodiment may be of a dual-emission type that emits light in thedirections of both the top and bottom surfaces of the display 200.

A pixel-defining layer 219 that includes an insulating material may beon the first electrode 231. The pixel-defining layer 219 may include oneor more organic insulating materials, e.g., polyimide, polyamide (PA),acryl resin, benzocyclobutene (BCB), and a phenolic resin, and may beformed by using a method such as spin coating. The pixel-defining layer219 may expose a predetermined area of the first electrode 231, and theintermediate layer 233 including the organic emission layer is in theexposed area of the first electrode 231. For example, the pixel-defininglayer 219 defines a pixel area of the organic light-emitting device 230.

The organic emission layer included in the intermediate layer 233 mayinclude a low molecular weight organic material or a high molecularweight organic material. In an implementation, the intermediate layer233 may further include functional layers, such as a hole transportlayer (HTL), a hole injection layer (HIL), an electron transport layer(ETL), and an electron injection layer (EIL), in addition to the organicemission layer.

The encapsulation layer 300 covering and sealing the display 200 may beon the second electrode 232. The encapsulation layer 300 may help blockexternal oxygen and moisture and may include a single layer or aplurality of layers.

FIG. 3 illustrates a schematic plan view of a matrix 310 of theencapsulation layer 300 of FIG. 1. FIG. 4 illustrates a schematiccross-sectional view of an inorganic layer 320 deposited on the matrix310 of FIG. 3. FIG. 5 illustrates a schematic cross-sectional view of anexample of a method of manufacturing the encapsulation layer 300 of FIG.3. FIG. 6 illustrates a schematic cross-sectional view of anotherexample of a method of manufacturing the encapsulation layer 300 of FIG.3.

Referring to FIGS. 3 and 5, the encapsulation layer 300 may include thematrix 310 including an organic material and a free volume (e.g., openspaces or internal spaces) F of the matrix 310, and may have a hybridstructure including an inorganic material 314 combined with the organicmaterial included in the matrix 310. The encapsulation layer 300 may beformed through an operation of forming the matrix 310 covering thedisplay (200 of FIG. 1) and an operation of forming the inorganicmaterial 314 in the free volume F of the matrix 310.

As illustrated in FIG. 3, the matrix 310 may be formed of polymer chainsC and may include, in locations such as the ends of the polymer chainsC, the free volume F that is not filled with the polymer chains C. Thefree volume F may be formed in various ways according to a type of theorganic material included in the matrix 310, a structure of the polymerchains C, etc. A size of the, e.g., unmodified, free volume F maygenerally be greater than that of oxygen, and therefore, oxygen couldpass through the matrix via the free volume F. Accordingly, if thedisplay were to be sealed by the matrix including only the organicmaterial, a defect such as a dark spot could be caused in the display bypenetration of external oxygen, etc. Thus, according to an embodiment,the free volume F may be at least partially filled with the inorganicmaterial 314 to prevent oxygen, etc. from passing through the freevolume F. Thus, the encapsulation layer 300 according to an embodimentmay not separately include an inorganic film having barriercharacteristics, thereby decreasing thickness of the encapsulation layer300 and improving flexibility.

In the free volume F, the inorganic material 314 may chemically combineor bond with the organic material used to form the matrix 310. Forexample, the organic material used to form the matrix 310 may includefunctional groups 312 capable of combining, reacting, or bonding withthe inorganic material 314. In an implementation, the functional group312 may be an aldehyde group, a ketone group, a carboxylic acid group,an ester group, an amide group, etc. having a carbon-oxygen double bond.The organic material used to form the matrix 310 may be polyester, apolyamide-based organic material, polyacrylic acid, PET, PMMA, or thelike. For example, an organic material, such as polypropylene,polytetrafluoroethylene, etc., that does not include the functionalgroup 312 may not be suitable for use as the organic material used toform the matrix 310. In an implementation, in the encapsulation layer300, the free volume may not be present, and may be filled by theinorganic material 314 bound to the matrix 310, e.g., through thefunctional group 312. In an implementation, in the encapsulation layer300, the size of the free volume may be reduced (from its original size)due to at least partial filling of the free volume by the inorganicmaterial 314 bound to the matrix 310, e.g., through the functional group312.

In an implementation, the inorganic material 314 may be formed in thefree volume F by a vapor infiltration method. For example, the inorganicmaterial 314 may be formed by sequentially infiltrating a first raw gasR1 and a second raw gas R2 into the free volume F. For example, when thematrix 310 is placed in a chamber filled with the first raw gas R1, thefirst raw gas R1 may infiltrate into the free volume F of the matrix 310due to diffusion of the first raw gas R1. Next, when the matrix 310 isplaced in a chamber filled with the second raw gas R2, the second rawgas R2 may infiltrate into the free volume F. Thus, the inorganicmaterial 314 may be formed in the free volume F or internal space due toa reaction of the first raw gas R1 with the second raw gas R2. In animplementation, when the inorganic material 314 is Al_(x)O_(y), thefirst raw gas R1 may be gas containing an aluminum atom, such astrimethylaluminum (TMA), and the second raw gas R2 may be H₂O, O₂, N₂O,or the like. In an implementation, the first raw gas R1 and the secondraw gas R2 may be variously selected depending on a type of theinorganic material 314.

An infiltration process of the first raw gas R1 and an infiltrationprocess of the second raw gas R2 may be repeated a plurality of timesuntil the matrix 310 has intended moisture and oxygen permeabilitycharacteristics.

The first raw gas R1 may combine or bond with the functional group 312of the organic material used to form the matrix 310, and thus, the firstraw gas R1 may form a chemical adsorption layer and a physicaladsorption layer. Accordingly, after the infiltration process of thefirst raw gas R1, a first purge process may be performed to remove thephysical adsorption layer (having a weak binding force). Thus, theinorganic material 314 may chemically combine with the organic materialused to form the matrix 310 and may be stably located in the free volumeF. In an implementation, after the infiltration process of the secondraw gas R2, a second purge process may be performed for removingresidual second raw gas R2 that has not reacted with the first raw gasR1.

The functional groups 312 of the organic material used to form thematrix 310 may exist not only in the free volume F but also on a surfaceof the matrix 310. Accordingly, during the infiltration process of thefirst raw gas R1, the first raw gas R1 could combine with the functionalgroup 312 that is present on the surface of the matrix 310, and thesecond raw gas R2 could react with the first raw gas R1 located on thesurface of the matrix 310, thereby forming the inorganic material 314 onthe surface of the matrix 310. If such a process were to be repeated, aninlet of the free volume F could be blocked, as illustrated in FIG. 4,by the inorganic material 314 that is formed on the surface of thematrix 310, and thus, the inorganic material 314 could form theinorganic layer 320 on the, e.g., surface of, matrix 310 rather thanfill the free volume F of the matrix 310. If the inorganic layer 320were to be formed on the, e.g., surface of, matrix 310, bendingcharacteristics of the encapsulation layer (300 of FIG. 1) coulddegrade, and when the encapsulation layer (300 of FIG. 1) is bent,damage could occur, such as cracking, to the inorganic layer 320,thereby degrading moisture blocking characteristics of the encapsulationlayer (300 of FIG. 1).

Accordingly, before the infiltration process of the first raw gas R1,the functional group 312 that is present on the surface of the matrix310 may be inactivated to help prevent the inorganic layer 320 frombeing formed on the matrix 310 (as illustrated in FIG. 4), allowing theinorganic material 314 to be effectively formed only in the internalspace F.

For example, as illustrated in FIG. 5, before the infiltration processof the first raw gas R1, the functional group 312 that is present on thesurface of the matrix 310 may be removed by performing a surfacetreatment on the matrix 310. In an implementation, the surface treatmentof the matrix 310 may include a plasma treatment.

In an implementation, as illustrated in FIG. 6, the functional group 312that is present on the surface of the matrix 310 may be inactivated withrespect to the first raw gas R1 by causing the functional group 312 thatis present on the surface of the matrix 310 to react with a thirdmaterial P first. The third material P may be a material that does notreact with the first raw gas R1 and may be a single compound or aplurality of compounds. For example, by combining the third material Pwith the functional group 312 that is present on the surface of thematrix 310 prior to performing the infiltration process with the firstraw gas R1, the first raw gas R1 may be prevented from combining withthe functional group 312 on the surface of the matrix 310, and thus, theinorganic material 314 may be effectively formed in the free volume F.

For example, the third material P may be alucone formed by exposing thematrix 310 to TMA and ethylene glycol in the stated order. In thisregard, when —OH is removed from a terminal group of alucone, only Cremains, and thus, the third material P may be prevented from reactingwith the first raw gas R1.

As described above, when the functional group 312 that is present on thesurface of the matrix 310 is inactivated before the infiltration processof the first raw gas R1, the inorganic material 314 may be effectivelyformed in the free volume F, and the inorganic layer 320 may beprevented from being formed on the surface of the matrix 310, asillustrated in FIG. 4. Accordingly, the encapsulation layer (300 ofFIG. 1) may have excellent moisture and oxygen blocking characteristicsin spite of including no separate barrier layer, and may obtainexcellent bending characteristics as the thickness of the encapsulationlayer (300 of FIG. 1) decreases.

The inorganic material 314 may be formed in the free volume F due toinfiltration of the first raw gas R1 and the second raw gas R2, and anamount of the inorganic material 314 that is in the free volume F may begreater than that of the inorganic material 314 that is on the surfaceof the matrix 310. For example, it may be understood that the inorganicmaterial 314 is rarely formed on the surface of the matrix 310, and thesurface of the matrix 310 may not be covered by the inorganic material314 but rather may be exposed. In addition, an amount of the inorganicmaterial 314 included in the matrix 310 may continuously decrease in athickness direction of the matrix 310.

Such a thin film encapsulation layer (300 of FIG. 1) may include asingle layer or may be stacked a plurality of times.

FIG. 7 illustrates a schematic cross-sectional view of a modifiedexample of the display apparatus 10 of FIG. 1.

Referring to FIG. 7, a display apparatus 20 may include the substrate100, the display 200 on the substrate 100, the encapsulation layer 300sealing the display 200, and an inorganic layer 400 between the display200 and the encapsulation layer 300.

The substrate 100, the display 200, and the encapsulation layer 300 arethe same as described above, and thus, repeated descriptions thereof areomitted.

The inorganic layer 400 may include one or more materials of siliconnitride, aluminum nitride, zirconium nitride, titanium nitride, hafniumnitride, tantalum nitride, silicon oxide, aluminum oxide, titaniumoxide, tin oxide, cerium oxide, and silicon oxynitride (SiON).

The inorganic layer 400 may cover the display 200 and help blockpenetration of external oxygen and moisture, etc. into the display 200,along with the encapsulation layer 300, and may help block diffusion ofa gas, generated during a process of forming the matrix (310 of FIG. 4)by using an organic material, into the display 200, and may help preventa defect such as a dark spot from occurring in the display 200.

By way of summation and review, a display apparatus having a slimprofile and flexible characteristics may include a thin filmencapsulation layer in order to block penetration of moisture or oxygen,etc. from the outside. The thin film encapsulation layer may includeinorganic films and organic films alternately stacked on each other. Asthe thickness of the inorganic films increases, oxygen and moistureblocking characteristics improve, whereas bending characteristics of thethin film encapsulation layer degrades, and damage such as crackingcould occur in the inorganic films due to the concentration of stress.

According to embodiments, the thickness of an encapsulation layer maydecrease, moisture and oxygen blocking characteristics may be obtained,and bending characteristics may improve.

The embodiments may provide a display apparatus that includes anencapsulation layer having excellent moisture and oxygen blockingcharacteristics and bending characteristics.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

What is claimed is:
 1. A display apparatus, comprising: a substrate; adisplay on the substrate; and an encapsulation layer that seals thedisplay, wherein the encapsulation layer includes: a matrix including anorganic material, and an inorganic material bonded to the organicmaterial through functional groups of the organic material of thematrix, wherein the matrix includes an internal space adjacent to theorganic material, the inorganic material being positioned in theinternal space.
 2. The display apparatus as claimed in claim 1, whereinan amount of the inorganic material in the internal space is greaterthan an amount of the inorganic material on a surface of the matrix. 3.The display apparatus as claimed in claim 1, wherein the functionalgroups present on a surface of the matrix are inactive with respect tothe inorganic material.
 4. The display apparatus as claimed in claim 1,wherein the functional groups are not present on the surface of thematrix.
 5. The display apparatus as claimed in claim 3, wherein: thematrix further includes a third material that does not react with theinorganic material, and the functional groups present on the surface ofthe matrix are combined with the third material.
 6. The displayapparatus as claimed in claim 1, further comprising an inorganic layerthat covers the display, the inorganic layer being between the displayand the encapsulation layer.
 7. A method of manufacturing a displayapparatus, the method comprising: forming a display on a substrate; andforming an encapsulation layer sealing the display, wherein forming theencapsulation layer includes: forming a matrix that covers the displaysuch that the matrix includes an internal space therein; infiltrating afirst raw gas into the internal space of the matrix; and infiltrating asecond raw gas into the internal space of the matrix to form aninorganic material in the internal space by reacting of the second rawgas with the first raw gas, wherein the matrix includes an organicmaterial having functional groups, and wherein the first raw gascombines with the functional groups.
 8. The method as claimed in claim7, further comprising inactivating the functional groups that are on asurface of the matrix prior to the infiltrating of the first raw gas. 9.The method as claimed in claim 8, wherein inactivating the functionalgroups that are on the surface of the matrix includes removing thefunctional groups from the surface of the matrix by performing a surfacetreatment prior to infiltrating the first raw gas.
 10. The method asclaimed in claim 9, wherein the surface treatment includes a plasmatreatment.
 11. The method as claimed in claim 7, wherein inactivatingthe functional groups that are on the surface of the matrix includesreacting the functional groups on the surface of the matrix with a thirdmaterial that does not react with the first raw gas prior toinfiltrating the first raw gas.
 12. The method as claimed in claim 7,wherein an amount of the inorganic material in the internal space isgreater than an amount of the inorganic material on a surface of thematrix.
 13. The method as claimed in claim 7, wherein the first raw gasand the functional group are chemically combined with each other. 14.The method as claimed in claim 7, further comprising forming aninorganic layer that covers the display such that the inorganic layer isbetween the display and the encapsulation layer.